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Filtering by: Creator McWhorter, O. T. Remove constraint Creator: McWhorter, O. T. Academic Affiliation Electrical Engineering and Computer Science Remove constraint Academic Affiliation: Electrical Engineering and Computer Science

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  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

  • Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition

    Creator:
    Alimardani, Nasir, McGlone, John M., Wager, John F., and Conley, John F., Jr.
    Abstract:
    Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
    Resource Type:
    Article
    Full Text:
    . Cast�an, E. Perez, S. Due~nas, L. Bail�on, T. Blanquart, J. Niinist€o, M. Ritala, and M. Leskel€a

  • Offloading of I/O transactions in current CPU architectures

    Creator:
    Larsen, Steen K.
    Abstract:
    IO transactions within a computer system have evolved along with other system components (i.e., CPU, memory, video) from programmed IO (PIO). In current mainstream systems (spanning from HPC to mobile) the IO transactions are CPU-centric descriptor-based DMA transactions. The key benefit is that slower IO devices can DMA write system...
    Resource Type:
    Dissertation
    Full Text:
    bene�t is that slower I/O devices can DMA write system receive tra�c to system memory and DMA read

  • Ring Amplifier Optimized for High Resolution Analog-to-Digital Converter Applications

    Creator:
    ElShater, Ahmed O.
    Abstract:
    In recent years, SAR ADCs have been shown to acheive faster conversion times and improved power efficiencies due to their simple building blocks that are digital in nature and scale favorably with technology. High resolution ADCs with stringent noise requirement has led to the adoption of hybrid ADC architectures such...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF Ahmed O. ElShater for the

  • Investigating new design alternatives for a radix-2 modular multiplier kernal and I/O subsystem

    Creator:
    Chaitheerayanon, Akekalak
    Abstract:
    A main arithmetic operation for cryptographic systems is modular exponenti- ation. Exponentiation is computed by a long sequence of modular multiplications. Modular multiplication can be implemented in a general-purpose processor or a dedicated hardware, but dedicated hardware tends to be faster than a processor. Modular multiplication is a time-consuming operation,...
    Resource Type:
    Masters Thesis
    Full Text:
    f�g ced fih c�d fZjBkXl�hnm o#p�o#q r s t u v ts k w k\x�y�w�z#x FIGURE 2.7: Data Path

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    used in this simulation are VG = 30 V, VTH0 = 1 V, τo = 10-9 sec, t = 105 sec, and T = 300 K

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    : Investigation of Ultra-thin In-Ga-Zn-O Thin-Film Transistors Abstract approved: John F. Wager The objective

  • Implementation Techniques for Variational Data Structures

    Creator:
    Meng, Meng
    Abstract:
    Many applications require not only representing variability in software and data, butalso computing with it. To do so efficiently requires variational data structures thatmake variability explicit in the underlying data and the operations used to manipulate it.Variational data structures have been developed ad hoc for many applications, but thereis little...
    Resource Type:
    Masters Thesis
    Full Text:
    Techniques for Variational Data Structures Abstract approved: Eric T. Walkingshaw Many applications require

  • Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

    Creator:
    Klarr, Tyler D.
    Abstract:
    As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
    Resource Type:
    Masters Thesis

  • Effects of ultraviolet illumination and a parylene-A activation layer on the gas phase sensing characteristics of ZnO nanobridges

    Creator:
    Mason, Ashley D.
    Abstract:
    ZnO nanowires (NWs) are good candidates for chemical sensing because of their high surface-to-volume ratio. In this work, ZnO nanobridge sensors were fabricated utilizing a novel method which uses carbonized photoresist (C-PR) as a nucleation layer. The use of C-PR allows simultaneous growth and integration of NWs to lithographically-defined features....
    Resource Type:
    Masters Thesis