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Filtering by: Committee Member Engle, J. F. Remove constraint Committee Member: Engle, J. F. Committee Member Gibbons, Brady J. Remove constraint Committee Member: Gibbons, Brady J.

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  • Thermal conductivity measurements of amorphous metal thin films via the 3ω method

    Creator:
    Zhan, Kai
    Abstract:
    Amorphous multicomponent metals have promising applications in novel electronic devices because of their atomically smooth surface morphology and lack of grain boundaries. It is important to understand the thermal transport properties of amorphous metals and an accurate measurement of their thermal conductivity will be essential for further improvement of device...
    Resource Type:
    Masters Thesis
    Full Text:
    the point-wise product of Fourier transforms: F {ΔTAC,1D(x) ∗ rect(x)} = F ΔT̃AC,1D(x) · F {rect(x

  • Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

    Creator:
    Alimardani, Nasir
    Abstract:
    Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
    Resource Type:
    Dissertation
    Full Text:
    . Keszler, and Prof. Brady J. Gibbons. I would sincerely like to thank Prof. John F. Wager for his wisdom

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    : Amorphous Oxide Semiconductors in Circuit Applications Abstract approved: John F. Wager The focus of this

  • Co-doped Barium Titanate Materials with High Dielectric Constants for Next Generation MLCC Dielectrics

    Creator:
    Grove, Kyle M.
    Abstract:
    New high-K dielectric materials are critically needed as chip real-estate becomes more and more of a premium in modern electronics designs. One of the most common devices used in electronics are multilayer ceramic capacitors (MLCCs) which are subject to severe volumetric constraints. One effective means to decrease the size of...
    Resource Type:
    Dissertation
    Full Text:
    the piezoelectric coefficient, and σj is applied stress [5]. Piezoelectricity can also be observed

  • Understanding of Ferroelectric to Relaxor Phenomenon in Bismuth-based Perovskite

    Creator:
    Gupta, Sanu K.
    Abstract:
    It has been well established that ferroelectric to relaxor crossover in piezoelectric ceramics exhibit promising electromechanical and dielectric properties over a wide temperature range, applying sensors and actuators transducers and such. A plethora of research has reported giant strain in various lead-free piezoelectric ceramics and attributed the reasoning to the...
    Resource Type:
    Dissertation
    Full Text:
    , Dr. John F. Conley, and Dr. Frank J. Tepley for serving as committee members. Special thanks to Dr