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Filtering by: Subject Doped semiconductors Remove constraint Subject: Doped semiconductors Decade 2000-2009 Remove constraint Decade: 2000-2009

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  • Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors

    Creator:
    Kykyneshi, Robert
    Abstract:
    Bulk properties of CuSc₁₋ₓMgₓO₂, CuSc₁₋ₓMgₓO₂₊y, BaCu₂S₂, Bai₁₋ₓKCu₂S₂, BaCu₂Se₂ and Bai₁₋ₓKₓCu₂Se₂ are investigated supporting the search for highly conductive p-type thin films. Mg is an efficient dopant in CuScO₂ with conductivity up to l.5.10⁻² S/cm. Oxidation of CuScO₂:Mg leads to further increase in conductivity up to 0.5 S/cm. The amount of...
    Resource Type:
    Masters Thesis
    Full Text:
    doped sample. Mg doping above 6 at. % leads to saturated or slightly decreased conductivities in CuScO2

  • Synthesis and study of transparent p- and n-type semiconductors and luminescent materials

    Creator:
    Park, Cheol-Hee
    Abstract:
    New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
    Resource Type:
    Dissertation
    Full Text:
    -type transparent conducting films of W-doped In2O3 and W-doped zinc indium oxide (ZIO) have been

  • NMR studies of CdF₂:Ga and CdF₂:Ga,Y

    Creator:
    Hilger, Derrick J.
    Abstract:
    Crystals of CdF₂:In and CdF₂:Ga reduced in a cadmium vapor exhibit unusual metastable properties that can be explained by a "negative U" model. This work uses NMR to investigate this model for CdF₂:Ga and CdF₂:Ga,Y and compare the results to optical measurements. Temperature dependent relaxation measurements were done on ¹¹³Cd...
    Resource Type:
    Dissertation
    Full Text:
    semiconducting cadmium fluoride, CdF2in crystal form. We have looked at crystals which have been doped with

  • Radiation effects on III-V heterostructure devices

    Creator:
    Jun, Bongim
    Abstract:
    The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...
    Resource Type:
    Dissertation
    Full Text:
    region affect the device performance more than the traps in the A1GaAs doped region. VT and g of HIGFET