The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
A significant barrier to the diffusion bonding of large (i.e. 600 mm) microchannel devices is the large capital investment required to setup production. This large capital investment extends from long heating and cooling cycles leading to poor production
capacities. Empirical studies in industry have shown that cooling rate is limited...