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Filtering by: Creator Mansour, N. S. Remove constraint Creator: Mansour, N. S. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    Electrical characterization of n-type aluminum gallium

  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    further improve n-channel MOS transistor reliability. 44 References [1] C. Hu, S. C. Tam, F.-C. Hsu

  • Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

    Creator:
    Aminzadeh, Payman G.
    Abstract:
    Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
    Resource Type:
    Masters Thesis
    Full Text:
    enhanced when wet oxides are used. N. S. Saks et. a/.3° have studied hot-carrier injection in n-channel

  • An n-sheet, state-space ACTFEL device model

    Creator:
    Hitt, John C.
    Abstract:
    The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
    Resource Type:
    Dissertation
    Full Text:
    An n-sheet, state-space ACTFEL device model AN ABSTRACT OF

  • Design of a 80/250-Msample/s FIR-filter for a pipelined ADC-FIR interface

    Creator:
    Stier, Hubert J.
    Resource Type:
    Masters Thesis
    Full Text:
    work. 3.4 I/O Requirements for the Filter Input X from the ADC Input X is an n-bit 2's complement

  • Design techniques for low-power multi-GS/s analog-to-digital converters

    Creator:
    Jiang, Tao
    Abstract:
    Ultra-high-speed (>10GS/s), medium-resolution (5~6bit), low-power (<50mW) analog-to-digital converter can find it application in the areas of digital oscilloscopes and next-generation serial link receivers. There are several challenges to enable a successful design, however. First, the time-interleaved architecture is required in order to achieve over 10GS/s sampling rate, with the trade-off...
    Resource Type:
    Dissertation
    Full Text:
    Design Techniques for Low-Power Multi-GS/s Analog-to

  • Analysis and design on low-power multi-Gb/s serial links

    Creator:
    Hu, Kangmin
    Abstract:
    High speed serial links are critical components for addressing the growing demand for I/O bandwidth in next-generation computing applications, such as many-core systems, backplane and optical data communications. Due to continued process scaling and circuit innovations, today's CMOS serial link transceivers can achieve tens of Gb/s per pin. However, most...
    Resource Type:
    Dissertation
    Full Text:
    ) and (2.4) to:     , 0 1 ( ) s s N k j F N ISI P x P x g t kT gs

  • Radiation effects in III-V compound semiconductor heterostructure devices

    Creator:
    Li, ChyiShiun
    Abstract:
    The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
    Resource Type:
    Masters Thesis
    Full Text:
    : Radiation Effects in 111-V Compound Semiconductor Heterostructure Devices. Abstract approved: S

  • A 400Mb/s 850nm FSO Link based on CMOS Integrated Receiver for Hybrid WiFi and Optical Femtocells

    Creator:
    Chen, Siyuan
    Abstract:
    The increasing demand for higher data-rates is challenging to satisfy with spectrum-deficient indoor WiFi networks. A novel hybrid WiFi Free-Space Optical (WIFO) system has been proposed to enhance the wireless capacity of indoor WiFi networks. In this thesis, an integrated optical wireless receiver is designed and integrated in 65-nm CMOS...
    Resource Type:
    Masters Thesis
    Full Text:
    /s 850nm FSO Link based on CMOS Integrated Receiver for Hybrid WiFi and Optical Femtocells Abstract

  • Active Control of Passive Dynamics for Ground Disturbance Rejection

    Creator:
    Koepl, Devin N.
    Abstract:
    We present a model for running that combines active control with passive dynamics, in an attempt to approach the economy and robustness of animal running. Our work is inspired by examples of guinea fowl encountering an unexpected drop in ground surface, with little a ect on their running gait. Previous...
    Resource Type:
    Honors College Thesis
    Full Text:
    . SIMULATIONS 21 0 0.2 0.4 0.6 0.8 1 0 500 1000 1500 Standard Spring−Mass Model Time (s) F or ce ( N