The electrical behavior of on-chip interconnects has become a dominant factor in silicon-based high speed, RF, and mixed-signal integrated circuits. In particular, the frequency-dependent loss mechanisms in heavily-doped silicon substrates can have a large influence on the transmission characteristics of on-chip interconnects. To optimize the performance of the integrated circuit,...
This study tested the utility of a variable mixing efficiency formulation proposed by Mashayek, et al. (2017) for use in oceanographic models other than the modern, pre-industrial ocean. This formulation is used to calculate diapycnal (vertical) mixing due to unresolved subgrid-scale processes. Results from Last Glacial Maximum (LGM) simulations for...
Variability in circuit performance due to process defects is a major concern in integrated circuit (IC) fabrication. Advanced IC manufacturing processes employ Chemical-Mechanical Polishing (CMP) for planarization of oxide and metal layers. CMP defects result in variations in the oxide and metal topographical profile. To reduce these topographical variations, electrically...
In cellular telephones, RF power amplifiers consume a significant part of the total phone current. Reducing the average PA current will extend battery life. In GSM systems the handset is commanded by the base station to transmit at power levels lower than full power much of the time. A Doherty...
For mmWave Integrated Circuit (IC) design, co-integration of passives can reduce size and power consumption, increase reliability, and reduce overall cost. However, skin and proximity effects in the metallization are aggravated at mmWave frequencies, resulting in increased attenuation and degradation of overall performance. Furthermore, tight integration of passive components (to...
A novel method for modeling bends in coplanar waveguides (CPWs) is described. The CPW can be viewed as a pair of parallel coupled quasi-slot lines. Bends in the CPW are modeled as a non-uniform coupled line system in terms of their even- and odd- mode characteristics. This modeling approach is...
Passive components, including spiral inductors and transformers, fabricated on silicon-based substrates are placing an increasing demand on radio-frequency integrated circuit (RFIC) design. Performance of the RFIC suffers from several non-ideal effects that must be taken into account in order to create a successful design. In particular, monolithic transformers can be...
Spiral inductors are a key component of mixed-signal and analog integrated circuits (IC's). Such circuits are often fabricated using silicon-based technology, owing to the inherent low-cost and high volume production aspects. However, semiconducting substrate materials such as silicon can have adverse effects on spiral inductor performance due to the lossy...
In high-frequency circuit design, performance is often limited by the quality of the passive components available for a particular process. Specifically, spiral inductors can be a major bottle-neck for Voltage-Controlled Oscillators (VCOs), Low-Noise Amplifiers (LNAs), mixers, etc. For designers to correctly optimize a circuit using a spiral inductor, several frequency-domain...
In advanced integrated circuit (IC) processes, the metal fill inserted to meet foundry imposed density requirements degrades the performance of interconnects and passive components which ultimately affects the overall circuit performance. Accounting for this degradation through electromagnetic and equivalent circuit modeling is becoming a critical aspect of IC design. However,...