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Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs

Creator:: Das, Utpal
Resource Type:: Masters Thesis
Full Text:: carrier 7r Constant (3.142) N N Total number of impurities per unit volume in the semiconductor 4i

A study of the photoresponse of semi-insulating gallium arsenide

Creator:: Schumm, Gerhard
Abstract:: The photoresponse behavior of semi-insulating GaAs is investigated. The photocarrier lifetime is discussed and the influence of surface and contact recombination is taken into account. Photocurrent-voltage characteristics have been measured and a mechanism for the gain in terms of space charge amplification and avalanching is suggested. The influence of deep...
Resource Type:: Masters Thesis
Full Text:: A Study of the Photorespone of Semi-Insulating Gallium Arsenide

Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination

Creator:: Yang, Howard C.
Abstract:: The optical and electrical characteristics of semi-insulating GaAs photoconductive detectors made with ohmic and Schottky contacts are studied in this thesis. Current - voltage measurements are made both in the dark and under varying power levels of HeNe laser (6328 Å) illumination. DC photocurrent gain is then calculated as a...
Resource Type:: Masters Thesis
Full Text:: - insulating gallium arsenide," Master Thesis, Oregon State University, Corvallis, OR., 1985. 23. M.A. Lampert

Electrical properties of GaAs FET structures

Creator:: Yang, Fanling Hsu
Abstract:: The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is...
Resource Type:: Dissertation
Full Text:: for his assistance and encouragement. The opportunity to initiate a new semiconductor

GaAs(100) surface chemistry : interactions with molecular chlorine and sulfur compounds

Creator:: Mokler, Scott M.
Abstract:: An important aspect in device technology is the processing of GaAs to produce highly-resolved etch patterns on the substrate. This is done typically on the GaAs(100) surface. Recently, a number of methods, all using chlorinated vapor reactants, have been applied to fabrication of GaAs devices. In spite of these technological...
Resource Type:: Dissertation
Full Text:: General physical properties of gallium 60 arsenide. 111.2 Gallium arsenide reconstructions with 65

Growth, fabrication and modeling of pseudomorphic laser diodes

Creator:: Ebner, John
Abstract:: This thesis reports on the crystal growth, fabrication, modeling and performance of Graded Index-Separate Confinement Heterostructure laser diodes which contain pseudomorphic InGaAs as the active region material. Laser epitaxial layers were grown with different indium mole-fractions, and a constant InGaAs layer thickness of 10 nm, on both sides of the...
Resource Type:: Dissertation
Full Text:: , Fabrication and Modeling of Pseudomorphic Laser Diodes I. Introduction Semiconductor injection lasers are

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: aluminum gallium arsenide, AlxGai_xAs, a ternary compound semiconductor. Ternary alloys, such as

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

Creator:: Orwa, Julius O.
Resource Type:: Masters Thesis
Full Text:: preparation of the manuscript. My final thanks go to Bruce Odekirk of TriQuint Semiconductor for providing

NMR study of GaAs at high temperature

Creator:: Han, Weimin, 1960-
Resource Type:: Dissertation
Full Text:: Introduction 1 1.1 Gallium Arsenide 1 1.1.1 Crystal Structure 2 1.1.2 Phase Equilibria 4 1.1.3 Semi

Drain current transient characterization of P-channel GaAs MESFET

Creator:: Peng, Lan L.
Abstract:: GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
Resource Type:: Masters Thesis
Full Text:: suggestions. The devices used in this work were fabricated by TriQuint Semiconductor, Inc. I would like to

ScholarsArchive@OSU

Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs

A study of the photoresponse of semi-insulating gallium arsenide

Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination

Electrical properties of GaAs FET structures

GaAs(100) surface chemistry : interactions with molecular chlorine and sulfur compounds

Growth, fabrication and modeling of pseudomorphic laser diodes

Electrical characterization of n-type aluminum gallium arsenide

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

NMR study of GaAs at high temperature

Drain current transient characterization of P-channel GaAs MESFET

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