Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with
the ohmic test structures and the Hall bar geometries. The DC characteristics of
normal gate transistors were evaluated at room temperature and at 77K and the
threshold voltages were extracted from the measurements and compared to the
theoretical results....
As Si MOS approaches its maximum limits in speed and bandwidth, new
devices are desired to meet the needs of high speed communications and signal
processing. A device that exhibits superior performance to Si MOS, BJT, and
GaAs technology is the HEMT (high electron mobility transistor).
The HEMT offers superior...
Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and
AIGaAs /InGaAs High Electron Mobility Transistors were electrically
characterized in order to compare the room temperature DC device
performance with one-dimensional device models. Model parameters
such as the channel mobility and source/drain series resistances are
extracted from independent measurement of...
This thesis reports on the growth and characterization of p-type
pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor
(MODFET) structures. A series of different p-type MODFET structures were grown
with a systematic variation of the indium mole fraction and quantum well width of
the InGaAs channel region. Extensive characterization...
Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor
(CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate
recess process. Several schemes were used in an attempt to improve the performance of
the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping.
Circuits and individual n- and p- channel...
The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...
This paper is concerned with the design of a 21-bit
metal-oxide-semiconductor field-effect transistor (MOSFET)
integrated circuit static shift register.
This circuit consists of three separate 1, 4, and
16-bit static shift registers constructed on a single
monolithic chip, each with independent input and output
terminals.
Type D flip-flops are used...