Two different doping techniques, oxygen intercalation and Mg cation
substitution, were investigated in thin film p-type CuScO₂, a wide band gap
semiconductor with the delafossite structure. Films rf-sputtered onto amorphous SiO₂
substrates were polycrystalline after post-deposition annealing. X-ray diffraction was
used to determine that the films are predominantly polycrystalline 3R...
The critical contribution of this dissertation is to provide a better
understanding of the fundamental Chemical Bath Deposition (CBD) growth
kinetic and mechanism for the well known II-VI semiconductor CdS using the
newly developed continuous flow microreactor. This continuous flow microreactor
provides the temporal resolution to control the homogeneous reaction...
Over the years, chemical bath deposition (CBD) is being widely used in the fabrication of Cu (In, Ga) Se₂ and CdTe based solar cells and photovoltaics. Many chalcogenides have been successfully deposited by this technique and it has received a great deal of attention owing to its low temperature and...
The preparation and characterization of thin film oxides and chalcogenides by pulsed laser deposition (PLD) is presented. An overview of fundamental PLD concepts are presented and are followed by a description implementation and development of the PLD systems at OSU. We present the results of thin film growth of high...
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CHAPTER 4: Thin Film Preparation and Characterization of p-type
Semiconductor BiCuOSe
Thin films of wide band-gap semiconductors are deposited by the pulsed laser deposition method. Optimal deposition parameters for the individual compounds are reported. A family of p-type BaCuQF (Q = S, Se, Te) ceramics with a layered crystalline structure is investigated for active and passive device applications.
Epitaxial films of...
Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel layers for TFTs. The entire process of the TFTs fabrication was maintained under 150 °C, which is compatible with flexible plastic substrates and transparent glass...
Nanostructured ZnO films were obtained via thermal oxidation of thin films formed with metallic Zn-nanoparticle dispersions. Commercial zinc nanoparticles used for this work were characterized by microscopic and thermal analysis methods to analyze the Zn-ZnO core shell structure, surface morphology and oxidation characteristics. These dispersions were spin-coated on SiO₂/Si substrates...
CuInGaSe₂ (CIGS), a promising thin film solar cell material, has gained lots of
attention in decades due to its high energy conversion efficiency and potential lower
manufacture cost over conventional Si solar cells. As a cheaper processing method
compared to vacuum-based techniques, solution-based deposition has been
successfully applied to fabricate...
Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
Bulk properties of CuSc₁₋ₓMgₓO₂, CuSc₁₋ₓMgₓO₂₊y, BaCu₂S₂, Bai₁₋ₓKCu₂S₂, BaCu₂Se₂
and Bai₁₋ₓKₓCu₂Se₂ are investigated supporting the search for highly conductive p-type
thin films. Mg is an efficient dopant in CuScO₂ with conductivity up to l.5.10⁻² S/cm.
Oxidation of CuScO₂:Mg leads to further increase in conductivity up to 0.5 S/cm. The
amount of...