Liliental, Z.; Wager, J. F.; Goodnick, S. M. (The American Institute of Physics, 1995-03-01)
InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å pe ...