Present day data processing technology requires very high speed signal processing and data conversion rates. One such application which requires high speed is switched capacitor circuits used in Sigma-Delta modulators. A ...
Layered multiconductor coupled slot and strip-slot structures are characterized
by introducing the full-wave modal analysis as well as the quasi-TEM spectral domain
technique. In the modal analysis, the electric and ma ...
In this dissertation, two important current mode circuit design subjects have
been explored. In the first part, the switched-current circuit technique has been
investigated. The fundamental performance and limitations ...
McMahon, Terry E. (Terry Edwin), 1963-(1994-06-10)
Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor
(CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate
recess process. Several schemes were used in an attempt to im ...
In this thesis the concept of inhomogeneous
dielectrics is demonstrated for various optical coating
applications. Compositionally-varying silicon oxynitride
(SiON) dielectric layers, with the refractive index
varying ...
Present day data processing technology requires very high speed signal processing
and data conversion rates. Traditionally, these circuits have been implemented in silicon
MOS technology, whose high speed performance i ...
Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with
the ohmic test structures and the Hall bar geometries. The DC characteristics of
normal gate transistors were evaluated at room temperature and at 7 ...
This thesis reports on the growth and characterization of p-type
pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor
(MODFET) structures. A series of different p-type MODFET structures were grow ...
Clock-feedthrough effects, channel-length modulation and device mismatch are
the main causes of the inaccuracy of Switched-Current (SI) circuits. In this paper, these
non-ideal effects are analyzed. A high-performance ...
Electron transport and relaxation may be substantially different in low-dimensional
systems compared to that observed in bulk material. In the present work, Monte Carlo
models are used for the solution to the Boltzmann ...
One of the ways of countering the ever increasing computational requirements
in the simulation and modeling of electrical and electromagnetic devices and phenomena,
is the development of simulation and modeling tools o ...
Much experimental research has been performed in the equilibrium regime
on individual quantum dots and quantum point contacts (QPCs). The focus of the
research presented here is electron transport in the nonequilibrium ...
The parallelization and vectorization of Monte Carlo algorithms for modelling
charge transport in semiconductor devices are considered. The standard ensemble
Monte Carlo simulation of a three parabolic band model for G ...
Herein, a program of research is detailed related to transport through the Si metal oxide semiconductor (MOS) quantum dots fabricated in a process flow compatible with modern ULSI (ultra large scale integrated circuit). ...