The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that ...

Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are ...