The general expressions for finding the network functions, e.g., the immittance and the scattering parameters, of a general, uniformly coupled n-line structure in an inhomogeneous medium are derived in terms of the no ...

A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, ...

The advent of low-cost RFIC's fabricated in Silicon-based technologies has led to the use of monolithic lumped elements which are located on-die. While it is clearly advantageous to have a high degree of integration and ...

Multiport network functions, such as impedance matrix parameters and scattering parameters, of general multiple coupled slab waveguides are derived in terms of the normal mode parameters of the system. These character ...

The improved accuracy of Time Domain Reflection and Transmission (TDR/T) measurements made possible by the calibration process known as Time Domain Network Analysis (TDNA) is applied to the problem of characterization ...

A new CAD-oriented methodology for the full-wave broadband characterization of coupled microstrip structures for RF/microwave and high-speed digital circuits is presented. The characterization methodology is based on t ...

A method and apparatus are presented for generating suppressed carrier digital clock signals. These clock signals have the advantage of being broad band in nature and thus exhibiting lower power spectral density. Structu ...

Recent advances in high density low cost RF and microwave three dimensional integration technologies using LTCC(Low Temperature Cofired Ceramics), laminate and other multilayer hybrid and integrated circuits have incre ...

With increasing operating frequencies in CMOS RF/microwave integrated circuits, the performance of on-chip interconnects is becoming significantly affected by the lossy substrate. It is the purpose of the first part of ...