mirage   mirage   mirage

Ferroelectric thin film development

DSpace/Manakin Repository

ScholarsArchive@OSU will be migrating to a new platform in the coming weeks - likely by November 1, 2017. We do not expect major service disruptions during this process, but if you encounter problems or have questions, please contact us at scholarsarchive@oregonstate.edu. Thank you for your patience.

Show simple item record

dc.contributor.advisor Wager, John F.
dc.creator Harman, Taran V.
dc.date.accessioned 2009-01-29T21:16:15Z
dc.date.available 2009-01-29T21:16:15Z
dc.date.copyright 2003-12-10
dc.date.issued 2003-12-10
dc.identifier.uri http://hdl.handle.net/1957/10287
dc.description Graduation date: 2004 en_US
dc.description.abstract The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and can be reversed by applying a field of opposite polarity. Ferroelectric thin films can be used in non-volatile memory applications in storage capacitors or as the gate dielectric of a field-effect transistor. Ferroelectric devices are fabricated by the deposition of ferroelectric lead zirconate titanate (PZT) by RF sputtering and by the chemical solution deposition (CSD) method of spin coating. Ferroelectric PZT capacitors are characterized by measuring capacitance and conductance as a function of frequency, and by measuring polarization as a function of applied electric field using a Sawyer-Tower circuit. Ferroelectric PZT capacitors with opaque Au or Ni top electrodes exhibit dielectric constants in the range of »300-600, typical of a ferroelectric film. However, all attempts to fabricate ferroelectric capacitors with transparent top contacts, involving several types of transparent conductors and the use of insulating buffer layers, resulted in charge injection and breakdown before the ferroelectric layer is fully polarized. en_US
dc.language.iso en_US en_US
dc.subject.lcsh Ferroelectric devices en_US
dc.subject.lcsh Ferroelectric thin films en_US
dc.title Ferroelectric thin film development en_US
dc.type Thesis en_US
dc.degree.name Master of Science (M.S.) in Electrical and Computer Engineering en_US
dc.degree.level Master's en_US
dc.degree.discipline Engineering en_US
dc.degree.grantor Oregon State University en_US

This item appears in the following Collection(s)

Show simple item record

Search ScholarsArchive@OSU

Advanced Search


My Account