Abstract:
High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂
and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities
ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and
the highest mobility was observed at a W-dopant concentration of x~0.03. A small band gap shift
was detected from films with increasing electron carrier density; the electron effective mass
calculated from Burstein-Moss theory was 0.3mₑ. In₂₋ₓWₓO₃₊y films have high visible transmittance
of ~80%.
