High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition

dc.creator	Newhouse, Paul F.
dc.creator	Park, C.-H.
dc.creator	Keszler, Douglas A.
dc.creator	Tate, J.
dc.creator	Nyholm, P. S.
dc.date.accessioned	2010-01-25T17:37:23Z
dc.date.available	2010-01-25T17:37:23Z
dc.date.issued	2005-09-09
dc.identifier.citation	Newhouse, P. F., park, C., Keszler, D. A., Tate, J., & Nyholm, P. S. (2005). High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition [Electronic version]. Applied Physics Letters, 87(11).	en
dc.identifier.uri	http://hdl.handle.net/1957/14055
dc.description	Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Institute of Physics (http://www.aip.org/).
dc.description.abstract	High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was 0.3mₑ. In₂₋ₓWₓO₃₊y films have high visible transmittance of ~80%.	en
dc.language.iso	en_US	en
dc.publisher	American Institute of Physics	en
dc.relation.ispartofseries	Applied Physics Letters	en
dc.relation.ispartofseries	Vol. 87 (2005)	en
dc.title	High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition	en
dc.type	Article	en
dc.identifier.doi	10.1063/1.2048829