Abstract:
Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via
rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and
20–50 cm² V‾¹ s‾¹ are obtained for devices post-deposition annealed at 300 and 600 °C,
respectively. TTFTs processed at 300 and 600 °C yield devices with turn-on voltage of 0–15 and
−5–5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than
10⁷ is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel
materials involving amorphous oxides composed of heavy-metal cations with (n−1)d¹⁰ ns⁰ (n ≥4) electronic configurations.
