Abstract:
InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 °C is shown to consist of two separate layers, an inner one of 30–70 Å thickness and probably composition InPO₄, and an outer one of 60-Å thickness and probably composition In₂O₃.
