Abstract:
Semiconducting materials which can be ambipolarly doped are highly desirable in many electronics applications, including use as solar cell materials. SnZrS₃ is being investigated for the possibility of ambipolar doping, with potential applications as a solar cell absorber layer. This dissertation covers the synthesis of SnZrS₃ and the related compound
Sn₂S₃, as well as measurements of the optical bandgap, Seebeck coeffcient, and resistivity of pressed powder pellets for these materials. A reproducible synthesis method by solid state reaction of the elements is developed for SnZrS3. Bandgaps of 1.16-1.21 eV and 1.14-1.15 eV are found for SnZrS3 and Sn2S3 respectively. SnZrS₃ and Sn₂S₃ are found
to be natively p-type, with Seebeck coeffcients of +600-700 μV/K and +1000 μV/K. Pressed pellet resistivities of 13 MΩcm for SnZrS₃ and 216 kΩcm for Sn₂S3 are measured. Preliminary doping studies are also carried out.
