Abstract:
As the semiconductor industry works to integrate increasingly more "non-CMOS" devices onto CMOS ICs, compact model development has become an important step in the circuit/system verification tool flow. This research focuses on the two- and three-dimensional modeling of the physical phenomena that occur in nanoscale magnetic devices. This includes the continuous time dynamics of the changing magnetization state in magnetic thin film spintronic devices such as GMR spin valves, toggle MRAM bits and magnetic tunnel junctions (MTJs). The various torques responsible for magnetization change are modeled in Verilog-A modules and have been simulated for several static and dynamic cases. Device behavior is verified using current-in-plane Oersted fields and current-perpendicular-to-plane, spin transfer torque (STT) as stimulus. All device compact models have electrical I/O and are being developed to provide accurate device terminal behavior when used in a circuit simulation environment with standard CMOS circuits.
