The effects of soaking HafSOx films in NaOH over varying time

Public Deposited

Citeable URL: https://ir.library.oregonstate.edu/concern/defaults/wh246t61d

Descriptions

Attribute Name	Values
Creator	Lucchini, Stefan
Abstract	HafSOx is a dielectric material that also functions as an insulator. It is able to be spin-coated onto a silicon substrate, creating a thin, amorphous film. It is very dense, which helps lead it to a high dielectric constant, making it ideal for electronic devices through the use of lithography. Additionally, it is environmentally friendly, has low fabrication costs due to its ability to use aqueous deposition, and is “future proof” in its abilities to be use in theoretical lithography techniques. The stripping phase is not well understood, prompting research interest.
Resource Type	Presentation
Date Available	2012-06-13T00:08:59+00:00
Date Issued	2012-06-12
Degree Level	Bachelor's
Non-Academic Affiliation	Oregon State University. Undergraduate Research, Scholarship, and the Arts (URSA)
Rights Statement	Copyright Not Evaluated
Funding Statement (additional comments about funding)	National Science Foundation
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Replaces	http://hdl.handle.net/1957/29828

Parents:

This work has no parents.

In Collection:

Thumbnail	Title	Date Uploaded	Visibility	Actions
	Soaking_films.ppt	07/21/2017	Public
	LucchiniStefan.pdf	07/21/2017	Public