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Defect mechanisms in high resistivity BaTiO₃–Bi(Zn₁/₂Ti₁/₂)O₃ ceramics

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Abstract
  • The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO₃–0.2Bi(Zn₁/₂Ti₁/₂) O₃ were investigated. Characterization of the nominally stoichiometric composition revealed the presence of a Ti³⁺-related defect center, which is correlated with lower resistivities and an electrically heterogeneous microstructure. In compositions with 2 mol. % Ba-deficiency, a barium vacancy-oxygen vacancy pair Vbₐ - Vₒ, acted as an electron-trapping site. This defect was responsible for a significant change in the transport behavior with a high resistivity and an electrically homogeneous microstructure.
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  • Raengthon, N., DeRose, V., Brennecka, G., & Cann, D. (2012). Defect mechanisms in high resistivity BaTiO3-bi(Zn1/2Ti1/2)O-3 ceramics (vol 101, 112904, 2012). APPLIED PHYSICS LETTERS, 101(11) doi: 10.1063/1.4752452
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  • 101
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  • 11
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  • The published article can be found at Applied Physics Letters.
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  • The authors would like to acknowledge NSF CHE-0840478 for funding the EPR spectroscopy at CAMCOR at the University of Oregon. A portion of this work was supported by the Energy Storage Program managed by Dr. Imre Gyuk of the Department of Energy’s Office of Electricity Delivery and Energy Reliability. Sandia National Laboratories Is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.
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