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Origin of p-type conduction in single-crystal CuAlO₂

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  • We report measurements of the structural, optical, transport, and magnetic properties of single crystals of the anisotropic p-type transparent semiconductor CuAlO₂. The indirect and direct band gaps are 2.97 and 3.47 eV, respectively. Temperature-dependent Hall measurements yield a positive Hall coefficient in the measured range and an activated carrier temperature dependence. The resistivity is anisotropic, with the ab-plane resistivity about 25 times smaller than the c-axis resistivity at room temperature. Both are activated with similar activation energies. The room-temperature ab-plane mobility is relatively large at 3 cm² V⁻¹ s⁻¹, and we infer a c-axis mobility of 0.12 cm² V⁻¹ s⁻¹. The Seebeck coefficient is positive at all measured temperatures, and has a T⁻¹ dependence over most of the measured range. The low-temperature paramagnetic moment is consistent with a spin-1/2 defect with a density of 3.4 X 10²⁰ cm⁻³. These results suggest that the conduction mechanism for p-type carriers in CuAlO₂ is charge transport in the valence band and that the holes are thermally activated from copper-vacancy acceptor states located about 700 meV above the valence-band maximum.
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  • Tate, J., Ju, H. L., Moon, J. C., Zakutayev, A., Richard, A. P., Russell, J., & McIntyre, D. H. (2009). Origin of p-type conduction in single-crystal CuAlO₂. Physical Review B, 80(16) doi:10.1103/PhysRevB.80.165206
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  • 80
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  • 16
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  • H.L.J. thanks Yonsei University for financial support during a 2008 sabbatical leave. This work received support from NSF under Grant No. DMR-0804916.
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