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Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

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  • Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar⁺ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.
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  • Li, T. T., Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., & Campbell, G. H. (2016). Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. Applied Physics Letters, 108(22), 221906. doi:10.1063/1.4953153
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  • 108
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  • 22
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  • This work performed under the auspices of the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under SCW0974 by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344. The work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
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