Wu, J. C.; Wybourne, M. N.; Yindeepol, W.; Weisshaar, A.; Goodnick, S. M.(American Institute of Physics, 1991-07-01)
Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of p ...
