The objective of this thesis is to provide an initial demonstration of two-terminal and three-terminal electronic devices employing amorphous multi-component metallic film
(AMMF) electrodes. Such a demonstration is succ ...
Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued.
The first focus is the realization of a transp ...
The objective of this dissertation is to develop amorphous metal thin films (AMTFs)
for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi
and TiAl, are investigated in both two-terminal ...
Electron transport and relaxation may be substantially different in low-dimensional
systems compared to that observed in bulk material. In the present work, Monte Carlo
models are used for the solution to the Boltzmann ...
The semiconductor gallium arsenide (GaAs) has many potential
advantages over the more widely used semiconductor silicon (Si).
These include higher low field mobility, semi-insulating substrates,
a direct band-gap, and ...
The purpose of this study is to develop experimental techniques to
characterize typical interconnect discontinuities, including bends, steps, T
junctions, vias and pads, which are the most commonly encountered
interco ...
It has become customary in electrical engineering to think of
signal processing in terms of voltage variables to the exclusion of
current variables. This tendency has resulted in voltage signal
processing circuits suc ...
The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gall ...