Abstract:
The preparation and characterization of thin film oxides and chalcogenides by pulsed
laser deposition (PLD) is presented. An overview of fundamental PLD concepts are
presented and are followed by a description implementation and development of the
PLD systems at OSU. We present the results of thin film growth of high electron
mobility In2O3:W in which we have prepared films exhibiting m > 100 cm2/Vs on
vitreous SiO2 substrates. The growth of Cu3TaCh4 (Ch = S, Se) films is outlined as a
two step process consisting of PLD of ceramic targets followed by ex-situ annealing in
chalcogenide vapor. Also, BiCuOSe thin films have been prepared in-situ and exhibit
a high hole mobility up to 4 cm2/Vs. A discussion of their electronic structure is
presented which explains the nature of the low band gap energy on the basis of deep
Bi 6p level at the conduction band minimum. Finally, the results of BaBiO3 thin film
preparation are presented in which both polycrystalline and highly (00l) oriented
samples were grown.
