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  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    . The VON − h trend is attributed to a large density (3.5× 1012 cm−2) of backside surface acceptor-like

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    -gallium-zinc oxide (IGZO) TFTs reveals an interface state distribution of ~1011- 1012 cm-2 eV-1 and that

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    ba nd ga p, χ re pr es en ts th e el ec tr on af fin ity ,T re pr es en ts th e pe rc

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    cells and modules. 0 0.5 1 1.5 2 200 600 1000 1400 1800 2200 2600 Sp ec tr al Ir ra di an ce

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    surface charge of −3.5 × 1012 !"−2. For this simulation, the Gaussian donor trap density TCAD parameter

  • Learning MDP action models via discrete mixture trees

    Creator:
    Wynkoop, Michael S.
    Abstract:
    This thesis addresses the problem of learning dynamic Bayesian network (DBN) models to support reinforcement learning. It focuses on learning regression tree models of the conditional probability distributions of the DBNs. Existing algorithms presume that the stochasticity in the domain can be modeled as a deterministic function with additive noise....
    Resource Type:
    Masters Thesis
    Full Text:
    produces an MDP with over 1012 states. The price variables do not count 21 toward the size of the state

  • Development of zinc tin oxide-based transparent thin-film transistors

    Creator:
    Chiang, Hai Q.
    Abstract:
    The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
    Resource Type:
    Masters Thesis
    Full Text:
    dependence of trap states has been neglected when determining S, IV (cm3eV'), and A (cm2V'). Ec EF Ev

  • p-type transparent electronics

    Creator:
    Valencia, Melinda Marie
    Abstract:
    The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
    Resource Type:
    Masters Thesis
    Full Text:
    0 0 0 0 1 1 1 1 2 2 2 2 3 3 3 3 Gate ChannelInsulator (b) EC EFEV Gate Insulator Channel (a

  • Efficient training and feature induction in sequential supervised learning

    Creator:
    Hao, Guohua
    Abstract:
    Sequential supervised learning problems arise in many real applications. This dissertation focuses on two important research directions in sequential supervised learning: efficient training and feature induction. In the direction of efficient training, we study the training of conditional random fields (CRFs), which provide a flexible and powerful model for sequential...
    Resource Type:
    Dissertation
    Full Text:
    features, we obtain more than 1012 features. This is obviously infeasible. 14 McCallum’s Mallet system

  • Amorphous multi-component metals as electrode materials

    Creator:
    Cowell, E. William
    Abstract:
    The objective of this thesis is to provide an initial demonstration of two-terminal and three-terminal electronic devices employing amorphous multi-component metallic film (AMMF) electrodes. Such a demonstration is successfully achieved in the fabrication of metal-insulator-metal (MIM) diode and hot electron transistor (HETs) structures employing ZrCuAlNi AMMF electrodes. The ultra-smooth surface...
    Resource Type:
    Masters Thesis
    Full Text:
    approximately 200 Ω to 1012 Ω [10]. The atomically smooth surface of an AMMF is advantageous for electrode