Index Catalog // ScholarsArchive@OSU

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Barati, Alireza, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
Resource Type:: Article

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Hein, Corinna, Mayer, Thomas, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...
Resource Type:: Article

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, Keszler, Douglas A., Hirano, Masahiro, and Hosono, Hideo
Abstract:: The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals,...
Resource Type:: Article

Creator:: Dimitrova, V., Draeseke, A., Tate, J., Yokoyama, T., Clark, B. L., Keszler, Douglas A., and Tate, Janet
Abstract:: We demonstrate color shifting from the yellow to the red in the electroluminescence from (ZnGa)S:Mn films. We observe threshold voltages down to about 35 V, extremely low for such devices. We discuss the materials characteristics of the phosphor films, and the potential for improvement of the luminous intensity of the...
Resource Type:: Article

Creator:: Newhouse, Paul F., Park, C.-H., Keszler, Douglas A., Tate, J., Nyholm, P. S., and Tate, Janet
Abstract:: High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03....
Resource Type:: Article

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, and Keszler, Douglas A.
Abstract:: BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively,...
Resource Type:: Article

ScholarsArchive@OSU