Index Catalog // ScholarsArchive@OSU

Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

Creator:: Witsell, Shane Mike’ele Williama
Abstract:: Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
Resource Type:: Masters Thesis
Full Text:: : ______________________________________________________ John F. Conley, Jr. Nucleation in atomic layer deposition (ALD) determines how many cycles

Atomic Layer Processing for Next-Generation Microelectronic Materials

Creator:: Holden, Konner E. K.
Abstract:: Atomic layer deposition (ALD) is an enabling technique for many new micro- and nanoscale technologies. The self-limiting surface chemical reactions by which ALD fundamentally operates give rise to uniquely high precision (atomic) control over deposited film thickness, uniformity over large areas, and conformality over complex and extreme topographies. One such...
Resource Type:: Dissertation
Full Text:: : ______________________________________________________ John F. Conley, Jr. Atomic layer deposition (ALD) is an enabling technique for many

Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

Creator:: Jenkins, Melanie A.
Abstract:: Metal-insulator-metal (MIM) and dual-insulator MIM (MIIM) devices are used in rectennas, hot-electron transistors, single electron transistors, resistive random access memory (RRAM), and capacitors. The performance of these devices relies heavily on the energy barrier height at each metal-insulator interface. Thus, determination of the in-situ electron energy barrier at each interface...
Resource Type:: Dissertation
Full Text:: Abstract approved: ______________________________________________________ John F. Conley Jr

Development and Applications of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation

Creator:: Smith, Sean Weston
Abstract:: In the first part of this work, thin films of Al₂O₃ deposited via atomic layer deposition (ALD) are demonstrated to improve the thermal stability of cellulose nanocrystal (CNC) aerogels. ALD is a chemical vapor deposition (CVD) like method in which sequential precursor exposures and self-limited surface reactions produce a conformal...
Resource Type:: Dissertation
Full Text:: : ______________________________________________________ John F. Conley Jr. In the first part of this work, thin films of Al2O3 deposited via

Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

Creator:: Austin, Dustin Z.
Abstract:: Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a core passive component in modern integrated circuits. International Technology Roadmap for Semiconductors (ITRS) projections for scaling of analog/mixed-signal MIMCAP applications require simultaneously increasing capacitance density while maintaining low leakage current density and low voltage nonlinearity (characterized by the quadratic...
Resource Type:: Dissertation
Full Text:: John F. Conley Jr. Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: : __________________________________________________ John F. Conley, Jr. Transparent conductive oxides (TCOs), primarily indium doped tin oxide

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Creator:: Klarr, Tyler D.
Abstract:: As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Resource Type:: Masters Thesis
Full Text:: : ______________________________________________________ John F. Conley, Jr As scaling of silicon (Si) based devices approaches fundamental

Fabrication of Cost-effective Flexible Glucose Sensor for Continuous Glucose Monitoring

Creator:: Mullapudi, Sri Sai Kameswara
Abstract:: Diabetes is a pandemic that affects nearly 29.1 million Americans and the fourth leading cause of mortality in the US. Type 1 diabetes is a chronic condition which occurs due to little to no production of insulin by the pancreas. This form of diabetes requires constant monitoring of blood glucose...
Resource Type:: Masters Thesis
Full Text:: : ______________________________________________________ John F. Conley, Jr. Diabetes is a pandemic that affects nearly 29.1 million Americans

Fabrication of a flexible glucose sensing catheter for human implantation

Creator:: Matthews, David J.
Abstract:: Flexible electronics processing techniques were applied to integrate a glucose sensor with a hormone-delivery catheter in order to create a cheap and minimally invasive method for patients with type 1 diabetes to continually monitor and control their blood sugar levels. Ultimately, this work intends to move toward the development of...
Resource Type:: Masters Thesis
Full Text:: : ______________________________________________________ John F. Conley, Jr. Flexible electronics processing techniques were applied to integrate a

I-V Characteristics of Al/HfO2/TaN RRAM Devices

Creator:: Valdivia, Arturo H.
Abstract:: The memristor is a resistive switching random access memory (RRAM) with a basic metal/insulator/metal (MIM) structure. These nano devices are nonvolatile, have a conceptually simple crossbar device structure, are power efficient and have the capability of switching between high and low resistance states in nanoseconds making them promising to replace...
Resource Type:: Honors College Thesis
Full Text:: : _ ____________________________________________________________________________ John F. Conley Jr. I-V Characteristics of Al/HfO2/TaN RRAM Devices

ScholarsArchive@OSU

Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

Atomic Layer Processing for Next-Generation Microelectronic Materials

Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

Development and Applications of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation

Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Fabrication of Cost-effective Flexible Glucose Sensor for Continuous Glucose Monitoring

Fabrication of a flexible glucose sensing catheter for human implantation

I-V Characteristics of Al/HfO2/TaN RRAM Devices

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