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Filtering by: Creator Tran, Jenny K. Remove constraint Creator: Tran, Jenny K. Advisor Forbes, Leonard Remove constraint Advisor: Forbes, Leonard

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  • Ultra low capacitance RFIC probe

    Creator:
    Jacob, Michael E.
    Abstract:
    In Radio Frequency Integrated Circuits (RFIC) or high frequency digital ICs, there is a demand to probe the internal nodes for testing. The ultra low capacitance RFIC probe presented in his work is a flexible tool for these applications. The probe utilizes the coupling between a tungsten needle and the...
    Resource Type:
    Masters Thesis
    Full Text:
    MOSFET2 Tran Tran2 StopTime=30.0 nsec StartTime=20 nsec TRANSIENT S_Param SP1 Span=0.8 GHz Center=5.7

  • Reliability and hot-electron effects in analog and mixed-mode circuits

    Creator:
    Ge, David Ying
    Abstract:
    Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
    Resource Type:
    Masters Thesis
    Full Text:
    . [2] S. Tam, P. K. Ko, and C. Hu, "Lucky electron model of channel hot electron injection in

  • Generation of substrate bias and current sources in CMOS technology

    Creator:
    Zhang, Jing, 1962-
    Abstract:
    A negatively biased substrate has several advantages over a grounded substrate in CMOS technology. The on-chip generation of this negative substrate bias has made chips easier to use when only a single supply is preferred. This project demonstrates two types of charge pump circuits used to generate negative voltages not...
    Resource Type:
    Masters Thesis
    Full Text:
    have I = k (w ) (V IV 1)2 (8) D 2 P I sgP tP We have demonstrated that a regulated VBB at -1.3V

  • Resonant forward-biased guard rings for suppression of substrate noise in mixed-mode CMOS circuits

    Creator:
    Ficq, Bernard L.
    Abstract:
    Previous work at Stanford University has demonstrated that inductance in the substrate connection is the principal problem underlying the coupling of digital switching noise into analog circuits. The low impedance substrate can be treated as a single node over a local area. Switching in the digital circuits produces current transients...
    Resource Type:
    Masters Thesis
    Full Text:
    1024-point Fast Fourier Transform perfomed on the output signal of the mixed-mode circuit. The k.1-41

  • Suppression of substrate noise in a mixed-signal CMOS integrated circuit

    Creator:
    Lim, Wei Tjan (Richard)
    Abstract:
    Substrate switching noise is becoming a concern as integrated circuits get larger and speeds get faster. Mixed-mode integrated circuits are especially affected as the substrate noise interferes with sensitive analog circuits resulting in limited signal to noise ratios. This thesis serves to study the cause of the noise at the...
    Resource Type:
    Masters Thesis
    Full Text:
    /ground bus during switching which satisfies the equation K = La/ where L is the effective lumped

  • An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

    Creator:
    Godbole, Hemendra G.
    Abstract:
    Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier...
    Resource Type:
    Masters Thesis
    Full Text:
    U a0 3 248 B3R T = 86 K 1 0.15 0.20 0.25 0.30 0.35 0.40 PHOTON ENERGY hv (eV) Figure 1

  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    1.5 eV Traps Ev . 2.7 2.9 3.1 3.3 3.5 1000 / T, (K-1) Figure 15. The Arrhenius plot of the drain

  • Characterization of oxygen and carbon effects in silicon material and MOSFET devices

    Creator:
    Haddad, Homayoon
    Resource Type:
    Dissertation
    Full Text:
    (K) 21 Figure 6) DLTS spectra for different deformations in n-type silicon after Omling [27

  • Timing jitter and phase noise in electronic oscillators

    Creator:
    Zhang, Chengwei
    Abstract:
    In the first part of this dissertation, low frequency l/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. This noise phenomenon is not described by...
    Resource Type:
    Dissertation
    Full Text:
    : fIKi nBn / 2 = (1.1) where K is a constant, IB is the

  • Electrical characterization of silicon and silicon dioxide materials

    Creator:
    Sze, Wing-Il
    Abstract:
    The major goal of this research work was to develop better electrical measurements for the evaluation of silicon material quality. The first approach investigated was the Zerbst generation lifetime measurement technique. It was demonstrated that the error in the estimation of the generation lifetime obtained with this technique could be...
    Resource Type:
    Dissertation
    Full Text:
    relationship (15) 21 should be presented as follows: 1 1 K S= + g (19) Tg' T g d where K may be a