Search Constraints

Start Over
Filtering by: Alternative title ssim EC 1012 Remove constraint Alternative title ssim: EC 1012 Advisor Wager, John Remove constraint Advisor: Wager, John

Search Results

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    -gallium-zinc oxide (IGZO) TFTs reveals an interface state distribution of ~1011- 1012 cm-2 eV-1 and that

  • Amorphous multi-component metals as electrode materials

    Creator:
    Cowell, E. William
    Abstract:
    The objective of this thesis is to provide an initial demonstration of two-terminal and three-terminal electronic devices employing amorphous multi-component metallic film (AMMF) electrodes. Such a demonstration is successfully achieved in the fabrication of metal-insulator-metal (MIM) diode and hot electron transistor (HETs) structures employing ZrCuAlNi AMMF electrodes. The ultra-smooth surface...
    Resource Type:
    Masters Thesis
    Full Text:
    approximately 200 Ω to 1012 Ω [10]. The atomically smooth surface of an AMMF is advantageous for electrode

  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    bending of the conduction band (EC) upwards, away from the Fermi level (EF ). The positive space charge

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    and valance bands, as shown in Fig. 2.2(c). EC EF EV Gate Insulator Semiconductor (a) (b