Search Constraints

Start Over
Filtering by: Alternative title ssim 4-H Club Series A-50 Remove constraint Alternative title ssim: 4-H Club Series A-50 Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

Search Results

  • Diamond-like carbon films for electroluminescent applications

    Creator:
    Kim, Seung-bae
    Abstract:
    White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
    Resource Type:
    Masters Thesis
    Full Text:
    observed when a low optical pumping energy was used; these oscillations were attributed to C-H wagging

  • Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

    Creator:
    Thuemler, Robert L.
    Resource Type:
    Masters Thesis
    Full Text:
    device with no dynamic space charge. 4 -2 0 50 100 Voltage (V) 150 200 19 Figure 3.5 A typical Q-V

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    coated selenium with gold and witnessed a photo response [4]. In 1954, silicon solar cells became a

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    pressure of 30 mTorr and constant power of 50 W. A forward sweep (increasing oxygen partial pressure

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    (AM0), at the Earth’s surface (AM1.5), and a blackbody radiation at 5800 K. . . . . . . . . . 4 2.2 (a

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    A.1 Sputter deposition for a fixed set of process parameters (50 W, 90:10 Ar/O2, 5 mTorr, 4

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 A simple pixel circuit for an AMOLED display. T1 is a switching transistor, T2 is a driving

  • Alternating-current thin-film electroluminescent device physics and modeling

    Creator:
    Douglas, Allan A.
    Abstract:
    Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
    Resource Type:
    Masters Thesis
    Full Text:
    CapacitanceCapacitance (1-1 o 1.5 1 .«! 0 0.5 0 -250 -150 -50 50 150 250 External Voltage (Volts) Figure 2-4. A

  • Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

    Creator:
    Abu-Dayah, Ahmad I.
    Resource Type:
    Masters Thesis
    Full Text:
    t, -50 -100 0 cond 4 0 G e + leak e­ po i F j: Y e + A aT po I A 8 ej 0

  • ACTFEL device simulation with impact ionization using a two-sheet charge model

    Creator:
    Bouchard, Anthony F.
    Abstract:
    The main achievement of this thesis is the development of a two-sheet charge simulation model with space charge creation by trap-to-band impact ionization to describe the electrical characteristics of alternating-current thin-film electroluminescent (ACTFEL) devices. The two-sheet charge model localizes all of the space charge in the phosphor region of an...
    Resource Type:
    Masters Thesis
    Full Text:
    ACTFEL device simulation with impact ionization using a two