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Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis
Full Text:: Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: Numerical simulation of Al [subscript x] Ga [subscript 1

Thermally-stable amorphous metal thin films

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE THESIS OF John M. McGlone for the degree

Contact resistance and stability assessment of oxide-based thin film transistors

Creator:: Hung, Celia M.
Abstract:: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
Resource Type:: Masters Thesis
Full Text:: . ©Copyright by Celia M. Hung September 19, 2006 All Rights Reserved Contact Resistance and

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 LIST OF FIGURES (Continued) Figure Page 6.3 Simulations of ΦB−Al−Al2O3 versus m∗ as obtained

Novel phosphor development for alternating-current thin-film electroluminescent devices

Creator:: Maddix, Crystal M.
Resource Type:: Masters Thesis
Full Text:: Electroluminescent Devices AN ABSTRACT OF THE THESIS OFAN ABSTRACT OF THE THESIS OF Crystal M. Maddix for the

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: encouragement. I would like to thank Professors S. M. Goodnick, A. Weisshar, and David Griffiths for serving

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: support during the course of this study. I would like to thank Professors S. M. Goodnick, R. Schreier

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Professors Curtis R. Cook, Vijai K. Tripathi, Stephen M. Goodnick, and William Hetherington for serving on

Amorphous metal thin films as a platform for solution processing

Creator:: Landau, Nicholas P.
Abstract:: The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin ﬁlm (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric ﬁlm quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
Resource Type:: Masters Thesis
Full Text:: characterized by the metal work function Φm, the barrier heights Φb, and the insulator electron affinity, χ

ScholarsArchive@OSU

Al-In-Sn-O thin-film transistors

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Thermally-stable amorphous metal thin films

Contact resistance and stability assessment of oxide-based thin film transistors

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Novel phosphor development for alternating-current thin-film electroluminescent devices

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Design, fabrication, and testing of inhomogeneous dielectrics

Amorphous metal thin films as a platform for solution processing

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