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Filtering by: Creator Lee, Peter D. Remove constraint Creator: Lee, Peter D. Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Phosphor development for alternating-current thin-film electroluminescent applications

    Creator:
    Nguyen, Tin T.
    Resource Type:
    Masters Thesis
    Full Text:
    graduate program. Special thanks are extended to Dr. D. Goodnick, Dr. B. Lee, and Dr. D. McIntyre for

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF Brian D. Pelatt for the

  • Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

    Creator:
    Mueller, Matthew R.
    Resource Type:
    Masters Thesis
    Full Text:
    . Ben Lee, and Dr. Mike Quinn for serving on my committee. I wish to thank a number of people who

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    , I OFF D ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h < 11 nm

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    enhancement-depletion (E-D) inverter based on heterogeneous channel materials. Simulation results using

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    cations (HMCs) with (n-1)d'°ns° (n4) electronic configurations. This thesis is devoted to the pursuit of

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    ) coplanar top-gate, and (d) coplanar bottom-gate. ....................4 2.2 A simplified illustration of a

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    on-to-off ratio of ION −OF F = 107, and a sub-threshold swing of S = 0.2 V /dec D were achieved

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    the gate for several biasing conditions: (b) equilibrium, (c) VGS <0 V, and (d) VGS >0 V

  • Development of Cu-based Thin Films for Optoelectronic Applications

    Creator:
    Angelos, Gregory S.
    Abstract:
    CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
    Resource Type:
    Dissertation
    Full Text:
    to determine maximum emission/excitation energies. The image is a 2-D mea- surement combining over 50