Index Catalog // ScholarsArchive@OSU

Physical vapor deposition of novel thin-film solar absorbers

Creator:: Waters, Benjamin E.
Abstract:: Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
Resource Type:: Masters Thesis
Full Text:: : Physical Vapor Deposition of Novel Thin-Film Solar Absorbers Abstract approved: John F. Wager Current

Fabrication and characterization of ACTFEL devices

Creator:: Keir, Paul D.
Abstract:: The goal of this thesis is the identification and synthesis of high-luminance, primary color alternating-current thin-film electroluminescent (ACTFEL) devices. Special attention is paid to the synthesis of primary color green ACTFEL devices because of the lack of an adequate primary green ACTFEL phosphor and the dominance of green wavelengths in...
Resource Type:: Dissertation
Full Text:: ABSTRACT OF THE DISSERTATION OF Paul D. Keir for the degree of Doctor of Philosophy in Electrical

Phosphor development for alternating-current thin-film electroluminescent applications

Creator:: Nguyen, Tin T.
Resource Type:: Masters Thesis
Full Text:: graduate program. Special thanks are extended to Dr. D. Goodnick, Dr. B. Lee, and Dr. D. McIntyre for

Atomic solid state energy scale applied to novel thin-film solar absorbers

Creator:: Pelatt, Brian D.
Abstract:: The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Resource Type:: Dissertation
Full Text:: AN ABSTRACT OF THE DISSERTATION OF Brian D. Pelatt for the

Modeling phosphor space charge in alternating-current thin-film electroluminescent devices

Creator:: Keir, Paul D.
Abstract:: The accomplishments presented in this thesis are the development of three models for simulation of space charge generation in the phosphor layer of alternating current thin-film electroluminescent (ACTFEL) devices and the results from simulation of these models. First, a single sheet charge model is developed and simulated. The single sheet...
Resource Type:: Masters Thesis
Full Text:: -film electroluminescent devices AN ABSTRACT OF THE THESIS OF Paul D. Keir for the degree of Master

Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

Creator:: Kumar, Manoj, 1972-
Resource Type:: Masters Thesis
Full Text:: effort: Dr. Shih-Lien Lu, Dr. V.K. Tripathi, and Dr. Bruce D. Ambrosio. I also wish to thank Dr. Thomas

Capacitance-voltage analysis, SPICE modeling, and aging studies of AC thin-film electroluminescent devices

Creator:: Davidson, James D. (James Douglas), 1960-
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are metal-insulator-semiconductorinsulator- metal (MISIM) structures which emit light under high field, pulsed excitation. One aspect of ACTFEL operation that is not well understood is the aging of such devices with operating time. One of the primary goals of this thesis is to characterize the kinetics...
Resource Type:: Masters Thesis

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Creator:: Chiang, Tsung-Han
Abstract:: The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-ﬁlm transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a ﬁxed set of...
Resource Type:: Masters Thesis
Full Text:: , I OFF D ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h < 11 nm

Process development and modeling of thin-film transistors

Creator:: Hong, David
Abstract:: A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
Resource Type:: Masters Thesis
Full Text:: cations (HMCs) with (n-1)d'°ns° (n4) electronic configurations. This thesis is devoted to the pursuit of

Instability and temperature-dependence assessment of IGZO TFTs

Creator:: Hoshino, Ken
Abstract:: Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
Resource Type:: Masters Thesis
Full Text:: ................................................................................................. 1 2 LITERATURE REVIEW

ScholarsArchive@OSU

Physical vapor deposition of novel thin-film solar absorbers

Fabrication and characterization of ACTFEL devices

Phosphor development for alternating-current thin-film electroluminescent applications

Atomic solid state energy scale applied to novel thin-film solar absorbers

Modeling phosphor space charge in alternating-current thin-film electroluminescent devices

Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

Capacitance-voltage analysis, SPICE modeling, and aging studies of AC thin-film electroluminescent devices

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Process development and modeling of thin-film transistors

Instability and temperature-dependence assessment of IGZO TFTs

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