Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued.
The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL)
devices as demonstrated by the brightness-voltage (BV)
characteristics is discussed. Two procedures for improvement of the
stability are demonstrated. The first method is the addition of a
CaS buffer layer to one or both interfaces of the ZnS active phosphor
layer....
CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel
MOSFETs under static (DC) stress are studied in order to establish the degradation
mechanisms of such devices. Degradation is monitored as a function of time at various
gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate
voltage...
The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...