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Filtering by: Alternative title ssim Technical note no. 202 Remove constraint Alternative title ssim: Technical note no. 202 Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    -IGZO TFT backplanes are already commercially available, e.g., iMac with 5K retina display, technical

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    semiconductor layer. IGZO-based TFTs with excellent stability are demonstrated, exhibiting almost no decrease

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    integrated IZO-based TFTs fabricated to date are found to be conductive and exhibit no gate modulation

  • Manufacture and characterization of novel ACTFEL materials and devices

    Creator:
    Bender, Jeffrey P.
    Abstract:
    The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
    Resource Type:
    Dissertation
    Full Text:
    for the Tasker-Chiang rf sputtering system and provided significant technical assistance during

  • ACTFEL phosphor deposition by RF sputtering

    Creator:
    Ang, Wie Ming
    Resource Type:
    Masters Thesis
    Full Text:
    to Jim Krebs, Chuck Meitt le, Art Nee ley, and Leon Ungier for their technical assistance without

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    troubleshoot problems. This research was funded by National Science Foundation under Grant No. CHE-0847970

  • Alternating-current thin-film electroluminescent device fabrication and characterization

    Creator:
    Baukol, Beau
    Resource Type:
    Dissertation
    Full Text:
    support of this research by providing technical advice, SrS:Cu devices for characterization, and

  • Novel phosphor development for alternating-current thin-film electroluminescent devices

    Creator:
    Maddix, Crystal M.
    Resource Type:
    Masters Thesis
    Full Text:
    thank Sey-Shing Sun of Planar Systems for helping with technical issues and supplying substrates

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    n-type substrate and a dopant density of ! 4 "10 15 cm-3. Note that there is no weak

  • Development of zinc tin oxide-based transparent thin-film transistors

    Creator:
    Chiang, Hai Q.
    Abstract:
    The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
    Resource Type:
    Masters Thesis
    Full Text:
    addition, the outstanding technical staff at OSU have made considerable contri- butions. If it were not