Index Catalog // ScholarsArchive@OSU

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

Creator:: Orwa, Julius O.
Resource Type:: Masters Thesis

Modeling and characterization of hemt devices

Creator:: Chang, Chujyh
Abstract:: Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
Resource Type:: Masters Thesis

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

Creator:: Yindeepol, Wipawan, 1960-
Abstract:: Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results....
Resource Type:: Masters Thesis

A parallel/vector Monte Carlo MESFET model for shared memory machines

Creator:: Huster, Carl R.
Abstract:: The parallelization and vectorization of Monte Carlo algorithms for modelling charge transport in semiconductor devices are considered. The standard ensemble Monte Carlo simulation of a three parabolic band model for GaAs is first presented as partial verification of the simulation. The model includes scattering due to acoustic, polar-optical and intervalley...
Resource Type:: Masters Thesis

Device characterization and analog circuit design for heterojunction FETs

Creator:: Wang, Binan
Abstract:: Present day data processing technology requires very high speed signal processing and data conversion rates. Traditionally, these circuits have been implemented in silicon MOS technology, whose high speed performance is limited, due to inherent material properties. Though relatively immature compared to silicon technology, GaAs integrated circuit technology appears to be...
Resource Type:: Masters Thesis

Analog integrated circuit design using GaAs C-HFETs

Creator:: Gupta, Rakhee
Abstract:: Present day data processing technology requires very high speed signal processing and data conversion rates. One such application which requires high speed is switched capacitor circuits used in Sigma-Delta modulators. A major active component of switched capacitor circuits is the monolithic operational amplifier(opamp). Because of the relatively poor speed performance...
Resource Type:: Masters Thesis

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Creator:: Schulte, Donald W.
Abstract:: This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
Resource Type:: Masters Thesis

Hot electron transport and relaxation in quantum wells and superlattices

Creator:: Lary, Jenifer Edith
Abstract:: Electron transport and relaxation may be substantially different in low-dimensional systems compared to that observed in bulk material. In the present work, Monte Carlo models are used for the solution to the Boltzmann transport equation, with scattering rates calculated quantum mechanically for superlattice and quantum wells. Carrier relaxation following optical...
Resource Type:: Dissertation

Fabrication, characterization and modeling of a superlattice base hot electron transistor

Creator:: Choo, Andrew Hua-kuang
Resource Type:: Masters Thesis

A 1-m W, 14-bit [sigma] [delta] A/D converter with 10-KHz conversion rate

Creator:: Gupta, Shivani
Resource Type:: Masters Thesis

ScholarsArchive@OSU

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

Modeling and characterization of hemt devices

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

A parallel/vector Monte Carlo MESFET model for shared memory machines

Device characterization and analog circuit design for heterojunction FETs

Analog integrated circuit design using GaAs C-HFETs

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Hot electron transport and relaxation in quantum wells and superlattices

Fabrication, characterization and modeling of a superlattice base hot electron transistor

A 1-m W, 14-bit [sigma] [delta] A/D converter with 10-KHz conversion rate

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