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Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis
Full Text:: Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: Numerical simulation of Al [subscript x] Ga [subscript 1

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE IliESIS OF Matthew R. Mueller for the degree

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: thanks to Professors T. Plant, J. Nibbler, and R. Nielsen for serv ing on my committee. Special thanks

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: 0.2 0.1 0.0 0.2 0.4 0.6 0.8 I I I r D a 0 0 Equiv. Al Mole Fraction, x no applied pressure D x

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: through out this work. Special thanks to Professor John R. Arthur, Professor Thomas K. Plant, and

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: support during the course of this study. I would like to thank Professors S. M. Goodnick, R. Schreier

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Professors Curtis R. Cook, Vijai K. Tripathi, Stephen M. Goodnick, and William Hetherington for serving on

Amorphous metal thin films as a platform for solution processing

Creator:: Landau, Nicholas P.
Abstract:: The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin ﬁlm (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric ﬁlm quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
Resource Type:: Masters Thesis
Full Text:: represented by εr or κ interchangeably. It is a measure of polarizability of a material and is related to the

Fabrication and characterization of thin-film transistor materials and devices

Creator:: Hong, David
Abstract:: A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
Resource Type:: Dissertation
Full Text:: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 6.3 Current-voltage characteristics for an IGZO TFT operated as a two- terminal M-S-M (Al-IGZO-Al

ScholarsArchive@OSU

Al-In-Sn-O thin-film transistors

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

ACTFEL phosphor deposition by RF sputtering

Electrical characterization of n-type aluminum gallium arsenide

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Design, fabrication, and testing of inhomogeneous dielectrics

Amorphous metal thin films as a platform for solution processing

Fabrication and characterization of thin-film transistor materials and devices

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