Index Catalog // ScholarsArchive@OSU

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: and -climb to reduce the DX concentration out of AlGaAs device region. Special thanks to Professor S

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: through out this work. Special thanks to Professor John R. Arthur, Professor Thomas K. Plant, and

Improved stability in ACTFEL devices

Creator:: Khormaei, Iranpour
Abstract:: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
Resource Type:: Masters Thesis
Full Text:: , guidance and encouragement. I would also like to extend my appreciation to Dr. Christopher N. King for

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Creator:: Grudzinsky, Arkady S.
Abstract:: The purpose of this thesis is to contribute to the understanding of SrS-based alternating-current thin-film electroluminescent (ACTFEL) device operation. Three main accomplishments serving this purpose are presented in this thesis. First, two new methods are developed for estimation of insulator capacitance in ACTFEL devices possessing a large amount of dynamic...
Resource Type:: Masters Thesis
Full Text:: Arkady S. Grudzinsky for the degree of Master of Science in Electrical and Computer Engineering

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: encouragement. I would like to thank Professors S. M. Goodnick, A. Weisshar, and David Griffiths for serving

Assessment of High Mobility Oxide Thin-Film Transistors

Creator:: Stewart, Kevin A.
Abstract:: The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
Resource Type:: Dissertation
Full Text:: ]. . . . . . . . . . . . . . . . . . . . . . 5 2.3 Current TFT semiconductors used in mass-production are a-Si:H, LTP- S, and a-IGZO. Required

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

Creator:: Yokoyama, Tomoe
Abstract:: The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
Resource Type:: Masters Thesis
Full Text:: approximately 2 nm/s. As-deposited films are trans- parent, insulating, and amorphous with an index of

Atomic solid state energy scale applied to novel thin-film solar absorbers

Creator:: Pelatt, Brian D.
Abstract:: The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Resource Type:: Dissertation
Full Text:: 53 elements from s-, p-, d- and f-blocks of the periodic table. The SSE scale is shown to be related

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis
Full Text:: both technically and personally. Acknowledgment is given to Ron Khormaei and Chris King of Planar

High resolution electroluminescent display using active matrix approach

Creator:: Khormaei, Iranpour
Resource Type:: Dissertation
Full Text:: . Wager and Dr. Christopher N. King for their guidance and encouragement throughout my graduate studies

ScholarsArchive@OSU

Electrical characterization of n-type aluminum gallium arsenide

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Improved stability in ACTFEL devices

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Assessment of High Mobility Oxide Thin-Film Transistors

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

Atomic solid state energy scale applied to novel thin-film solar absorbers

Alternating-current thin-film electroluminescent device physics and modeling

High resolution electroluminescent display using active matrix approach

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