Search Constraints

Start Over
Filtering by: Advisor Engle, John F. Remove constraint Advisor: Engle, John F. Committee Member Cheng, Larry Remove constraint Committee Member: Cheng, Larry

Search Results

  • Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

    Creator:
    Witsell, Shane Mike’ele Williama
    Abstract:
    Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
    Resource Type:
    Masters Thesis
    Full Text:
    : ______________________________________________________ John F. Conley, Jr. Nucleation in atomic layer deposition (ALD) determines how many cycles

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    . Title: Electronic Conduction Mechanisms in Insulators Abstract approved: John F. Wager The research

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    Transistors Abstract approved: ______________________________________________________ John F

  • Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

    Creator:
    Austin, Dustin Z.
    Abstract:
    Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a core passive component in modern integrated circuits. International Technology Roadmap for Semiconductors (ITRS) projections for scaling of analog/mixed-signal MIMCAP applications require simultaneously increasing capacitance density while maintaining low leakage current density and low voltage nonlinearity (characterized by the quadratic...
    Resource Type:
    Dissertation
    Full Text:
    John F. Conley Jr. Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have

  • Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

    Creator:
    Klarr, Tyler D.
    Abstract:
    As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
    Resource Type:
    Masters Thesis
    Full Text:
    : ______________________________________________________ John F. Conley, Jr As scaling of silicon (Si) based devices approaches fundamental

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    : Investigation of Ultra-thin In-Ga-Zn-O Thin-Film Transistors Abstract approved: John F. Wager The objective