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Filtering by: Committee Member Conley, John F. Jr Remove constraint Committee Member: Conley, John F. Jr Committee Member Keszler, Douglas A. Remove constraint Committee Member: Keszler, Douglas A.

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  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    : Thermally-Stable Amorphous Metal Thin Films. Abstract approved: John F. Wager Amorphous metal thin films

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    Assessment of IGZO TFTs. Abstract approved: _____________________________________________________ John

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    . Abstract approved: John F. Wager Due to a lack of grain boundaries, an amorphous metal thin film (AMTF

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    : _____________________________________________________ John F. Wager Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated