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Filtering by: Subject Metal oxide semiconductor field-effect transistors Committee Member Lu, Shih-Lien

Ultra low voltage DRAM current sense amplifier with body bias techniques

Creator:

Gang, Yung-jin, 1957-

Abstract:

The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...

Resource Type:

Dissertation

Full Text:

. Along the y-axis, the box contains two one-half field oxide features and one active area feature
Wide bandwidth GaAs MESFET amplifier

Creator:

Yan, Kai-tuan Kelvin

Resource Type:

Masters Thesis

Full Text:

structure which make use of metal Schottky contact does not require any native oxide. The Si02 oxide in