New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
In this thesis I studied several THz components that can be used for potential THz
technology. THz waves were generated in nonlinear medium via optical rectification
of femtosecond optical pulses. Utilizing the phase matching condition between the
optical and THz waves in a ZnTe crystal, single-cycle broad-band THz pulses were...
Several types of solid-state inorganic materials are prepared and characterized. By using the SILAR (Successive Ionic Layer Adsorption and Reaction) deposition method in conjunction with hydrothermal dehydration both low-temperature deposition and crystallization of oxide thin films are achieved. Various aspects of new transparent p-type materials are studied by examining both...
Piezoelectric materials have been widely used in electromechanical actuators, sensors, and ultrasonic transducers. Among these materials, lead zirconate titanate Pb(Zr[subscript 1‐x]Ti[subscript x])O₃ (PZT) has been primarily investigated due to its excellent piezoelectric properties. However, environmental concerns due to the toxicity of PbO have led to investigations into alternative materials systems....
The aim of this dissertation is to develop oxide semiconductors by radio-frequency
sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors
are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin
oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
The Gd3+ ion has been used to induce quantum splitting in luminescent
materials by using cross-relaxation energy transfer (CRET). In Nd:LiGdF4, quantum
splitting results from a two-step CRET between Gd3+ and Nd3+, first involving a
transition 6G→6I on Gd3+ and an excitation within the 4f3 configuration of Nd3+
followed by...