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Filtering by: Subject Metal oxide semiconductor field-effect transistors Remove constraint Subject: Metal oxide semiconductor field-effect transistors Committee Member Tripathi, Vijai K. Remove constraint Committee Member: Tripathi, Vijai K.

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  • Ultra low voltage DRAM current sense amplifier with body bias techniques

    Creator:
    Gang, Yung-jin, 1957-
    Abstract:
    The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
    Resource Type:
    Dissertation
    Full Text:
    . Along the y-axis, the box contains two one-half field oxide features and one active area feature

  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET