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Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Barati, Alireza, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
Resource Type:: Article
Full Text:: . Newhouse, R. Kykyneshi, P. A. Hersh, J. Kinney, D. H. McIntyre, and D. A. Keszler, Thin Solid Films 516

Creator:: Zakutayev, Andriy
Abstract:: BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 – 3.5 eV) and a high concentration of free holes (10¹⁸ – 10²⁰ cm⁻³) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level...
Resource Type:: Dissertation
Full Text:: . F. Newhouse, R. Kykyneshi, P. A. Hersh, J. Kinney, D. H. McIntyre, and D. A. Keszler, Thin Solid

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Hein, Corinna, Mayer, Thomas, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...
Resource Type:: Article
Full Text:: . F. Newhouse, R. Kykyneshi, P. A. Hersh, J. Kinney, D. H. McIntyre, and D. A. Keszler, Thin Solid

Creator:: Vidal, Julien, Lany, Stephan, d’Avezac, Mayeul, Zunger, Alex, Zakutayev, Andriy, Francis, Jason, and Tate, Janet
Abstract:: SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has...
Resource Type:: Article
Full Text:: , A. S. Hock, and R. G. Gordon, Adv. Energy Mater. 1, 1116 (2011) 14L. Yu, S. Lany, R. Kykyneshi, V

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