Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O
at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were
analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution
transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films
deposited...