The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...