Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on
heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing
the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission
spectroscopy has been used to determine the band offsets in...
The diffusion behavior of arsenic (As) and gallium (Ga) atoms from semi-insulating GaAs (SI-GaAs) into ZnO films upon post-growth annealing vis-`a-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy. The films, annealed at 600 °C and 700 °C showed...